|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SC2619 Silicon NPN Epitaxial REJ03G0703-0200 (Previous ADE-208-1070) Rev.2.00 Aug.10.2005 Application High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 150 150 -55 to +150 Unit V V V mA mW C C Rev.2.00 Aug 10, 2005 page 1 of 8 2SC2619 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF Min 30 30 5 -- -- 60 -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 230 -- 5.0 Max -- -- -- 0.5 0.5 200 1.1 0.75 -- 3.5 -- Unit V V V A A V V MHz pF dB Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 20 V, IC = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 2 mA, f = 1 MHz, Rg = 500 Note: 1. The 2SC2619 is grouped by hFE as follows. Grade B C Mark FB FC hFE 60 to 120 100 to 200 Rev.2.00 Aug 10, 2005 page 2 of 8 2SC2619 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 150 10 Typical Output Characteristics 100 Collector Current IC (mA) 8 80 100 6 60 4 40 20 mA IB = 0 50 2 0 50 100 150 0 4 8 12 16 20 Ambient Temperature Ta (C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 100 Typical Transfer Characteristics 10 VCE = 6 V DC Current Transfer Ratio hFE Collector Current IC (mA) 8 80 6 60 VCE = 6 V 4 40 2 20 0 0.2 0.4 0.6 0.8 1.0 0 0.1 0.3 1.0 3 10 30 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Noise Figure vs. Collector Current 5 Noise Figure vs. Signal Source Resistance 24 Noise Figure NF (dB) 4 Noise Figure NF (dB) VCE = 6 V Rg = 500 f = 1.0 MHz 20 16 12 8 4 0 0.1 VCE = 6 V Rg = 50 f = 100 MHz 3 2 1 0 0.2 0.5 1.0 2 5 10 0.2 0.5 1.0 2 5 10 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 8 2SC2619 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 500 VCE = 6 V Noise Figure vs. Signal Source Resistance 12 10 8 6 4 2 0 10 20 50 100 200 500 1000 VCE = 6 V IC = 1 mA f = 100 MHz Noise Figure NF (dB) 400 300 200 100 0 0.1 0.3 1.0 3 10 30 Signal Source Resistance Rg () Gain Bandwidth Product vs. Collector to Emitter Voltage Gain Bandwidth Product fT (MHz) 400 IC = 1 mA 300 Collector Current IC (mA) Input/Output Admittance vs. Collector to Emitter Voltage Percentage of Relative to VCE = 6 V (%) 500 boe goe gie goe bie boe IC = 1 mA f = 455 kHz 200 bie gie 100 50 200 100 20 10 1 2 5 10 20 50 0 1 2 5 10 20 Collector to Emitter Volgage VCE (V) Input/Output Admittance vs. Collector Current Percentage of Relative to VCE = 6 V (%) Percentage of Relative to IE = 1 mA (%) 500 VCE = 6 V f = 455 kHz 200 bie 100 boe 50 bie gie 20 10 0.1 goe 0.2 0.5 1.0 2 5 boe gie goe 500 Collector to Emitter Voltage VCE (V) Transfer Admittance vs. Collector to Emitter Voltage IC = 1 mA f = 455 kHz 200 bfe 100 g fe 50 bre gfe bfe bre 20 10 1 2 5 10 20 50 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 4 of 8 2SC2619 Transfer Admittance vs. Collector Current Percentage of Relative to IC = 1 mA (%) 500 VCE = 6 V f = 455 kHz 200 100 50 bre bfe Input/Output Admittance vs. Collector to Emitter Voltage Percentage of Relative to VCE = 6 V (%) 500 boe goe gie bie gie bie goe boe IC = 1 mA f = 4.5 MHz gfe bre 200 100 50 20 gfe 10 0.1 0.2 bfe 0.5 1.0 2 5 20 10 1 2 5 10 20 50 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) Transfer Admittance vs. Collector to Emitter Voltage Percentage of Relative to VCE = 6 V (%) 500 IC = 1 mA f = 4.5 MHz 200 100 50 bre bfe gfe Input/Output Admittance vs. Collector Current Percentage of Relative to IC = 1 mA (%) 500 VCE = 6 V f = 4.5 MHz 200 100 50 goe gie bie boe bie gie goe boe bre gfe bfe 20 10 0.1 20 10 1 2 5 10 20 50 0.2 0.5 1.0 2 5 Collector Current IC (mA) Transfer Admittance vs. Collector Current Percentage of Relative to IC = 1 mA (%) 500 VCE = 6 V f = 4.5 MHz 200 100 50 bre bre bfe gfe Collector to Emitter Voltage VCE (V) Input/Output Admittance vs. Collector to Emitter Voltage Percentage of Relative to VCE = 6 V (%) 500 IC = 1 mA f = 10.7 MHz 200 100 50 goe gie boe gie bie bie goe boe 20 10 0.1 gfe bfe 0.2 0.5 1.0 2 5 20 10 1 2 5 10 20 50 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 5 of 8 2SC2619 Input/Output Admittance vs. Collector Current Transfer Admittance vs. Collector to Emitter Voltage Percentage of Relative to IC = 1 mA (%) 500 VCE = 6 V f = 10.7 MHz 200 100 gie goe Percentage of Relative to VCE = 6 V (%) 500 IC = 1 mA f = 10.7 MHz 200 100 50 bre bfe gie bie bie boe 50 boe gie 20 10 0.1 goe bfe gie bre 20 10 1 2 5 10 20 50 0.2 0.5 1.0 2 5 Collector Current IC (mA) Transfer Admittance vs. Collector Current Collector to Emitter Voltage VCE (V) Input/Output Admittance vs. Collector to Emitter Voltage Percentage of Relative to IC = 1 mA (%) 500 VCE = 6 V f = 10.7 MHz bre bfe gfe bre Percentage of Relative to VCE = 6 V (%) 500 goe b oe gie IC = 1 mA f = 100 MHz 200 100 50 200 100 50 bie gie bie goe boe 20 gfe bfe 20 10 1 2 5 10 20 50 10 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) Input/Output Admittance vs. Collector Current Collector to Emitter Voltage VCE (V) Transfer Admittance vs. Collector to Emitter Voltage Percentage of Relative to IC = 1 mA (%) Percentage of Relative to VCE = 6 V (%) 500 VCE = 6 V f = 100 MHz 200 bie 100 50 boe bie gie 20 goe 0.2 0.5 1.0 2 5 goe gie 500 IC = 1 mA f = 100 MHz 200 100 50 bre gfe bfe bfe gfe bre boe 20 10 1 2 5 10 20 50 10 0.1 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 6 of 8 2SC2619 Transfer Admittance vs. Collector Current Percentage of Relative to IC = 1 mA (%) 500 VCE = 6 V f = 100 MHz bre bre bfe gfe 200 100 50 gfe 20 bfe 10 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 7 of 8 2SC2619 Package Dimensions JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV MASS[Typ.] 0.011g D e A Q c E HE L L1 A3 LP Reference Symbol Dimension in Millimeters A A xM S A b e A2 A A1 S b b1 c b2 e1 c1 I1 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 1.95 0.3 Ordering Information Part Name 2SC2619FBTR-E 2SC2619FCTR-E 3000 Quantity Shipping Container 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
Price & Availability of 2SC2619 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |